Designing some of the highest performance microchips in the world--from NG Fabs to domestic commercial Fabs.
Microelectronics Products and Services
Northrop Grumman’s microelectronics products enable missions that range from advanced satellite communications and complex astrophysics systems to commercial applications, such as smartphones and ground-based communications infrastructure. Northrop Grumman has several U.S. based facilities with state-of-the-art design capabilities, multiple Si and III-V processing nodes, electrical testing, reliability screening, and failure analysis.
Microchips for Any Mission
Fabricate
Investing in infrastructure and production facilities on U.S. soil to deliver customizable, end-to-end microelectronics solutions.
Assemble / Package
Utilizing assembly techniques or advanced packaging, we ensure each component is meticulously placed and secured.
Test
Evaluating our products throughout the entire process to ensure every device works, every time.
Integrate
By expertly integrating components into cohesive systems and platforms, we ensure top-tier performance, quality and innovation.
Products
Power Amplifiers
Power Amplifiers
Power Amplifiers
| Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | PSat (dBm) | Availability |
|---|---|---|---|---|---|---|
| APH668 | GaAs HEMT High Power Amplifier | 71 - 76 | 19 | TBD | 28 | Stock |
| APH670 | GaAs HEMT Medium Power Amplifier | 71 - 76 | 21 | TBD | 25 | Stock |
| APH667 |
GaAs HEMT High Power Amplifier | 81 - 86 | 17 | TBD | 25.5 | Stock |
| APH669 | GaAs HEMT Medium Power Amplifier | 81 - 86 | 16 | 20 | 23.5 | Stock |
| APH482 | HEMT High Power Amplifier | 92 - 96 | 7.5 | 22 | 25 | Stock |
| APH631 | HEMT Power Amplifier | 92 - 96 | 23 | 15 | 18 | Stock |
| APH635 | HEMT Power Amplifier | 92 - 95 | 17 | 20 | 22 | Stock |
GaN Power Amplifiers
| Part | Description | Frequency (GHz) | Gain (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
|---|---|---|---|---|---|---|---|
| APN267 | GaN HEMT Distributed Amplifier | 2-18 | 10 | 35 | 38 | Die | Stock |
| APN270 | GaN HEMT Power Amplifier | 9-13.2 | 12 | 39 | 41 | Die | Stock |
| APN252 | GaN HEMT Driver Amplifier | 10-14 | 25.5 | 34 | 38 | Die | Stock |
| APN250 | GaN HEMT Power Amplifier | 10-14 | 13 | 39 | 42 | Die | Stock |
| APN226 | GaN HEMT Power Amplifier | 13-16 | 20 | 36 | 39.5 | Die | Stock |
| APN232 | GaN HEMT Power Amplifier | 13.5-15.5 | 13 | 38.5 | 42 | Die | Stock |
| APN237 | GaN HEMT Dual Channel Power Amplifier | 13.5-15.5 | 12.5 | 40.5 | 44 | Die | Stock |
| APN279 | GaN HEMT Power Amplifier | 16-20.8 | 17 | 39.5 | 42.5 | Die | Stock |
| APN187 | GaN HEMT Power Amplifier | 17-22 | 17 | 40 | 42 | Die/Tab | Stock |
| APN149 | GaN HEMT Power Amplifier | 18-23 | 20 | 38 | 39 | Die/Tab | Stock |
| APN243 | GaN HEMT Power Amplifier | 23-28 | 20 | 38 | 40.5 | Die | Stock |
| APN244 | GaN HEMT Power Amplifier | 23-28 | 21 | 37 | 39 | Die | Stock |
| APN228 | GaN HEMT Power Amplifier | 27-31 | 16 | 39 | 41.2 | Die/Tab | Stock |
| APN229 | GaN HEMT Power Amplifier | 27-32 | 20 | 17 | 39 | Die/Tab | Stock |
| APN292 | GaN HEMT Power Amplifier | 27-30 | 20 | 42 | 45.5 | Die | Stock |
| APN311 | GaN HEMT Power Amplifier | 27-31 | 20 | 43 | 45 | Die | Stock |
| APN173 | GaN HEMT Power Amplifier | 34-36 | 19.5 | TBD | 37.5 | Die | Stock |
| APN236 | GaN HEMT Power Amplifier | 34.5-35.5 | 16 | 38 | 40 | Die | Stock |
| APN167 | GaN HEMT Power Amplifier | 43-46 | 20 | 35.5 | 38.5 | Die | Stock |
| APN318 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 15 | - | 40 | Die | Pre-Production |
| APN319 | GaN HEMT Power/Driver Amplifier | 47.2-51.4 | 16 | - | 37 | Die | Pre-Production |
| APN352 | GaN HEMT Power/Driver Amplifier | 47-51 | 15.5 | 40 | 40.5 | Die | Stock |
| APN353 | GaN HEMT Power/Driver Amplifier | 47-51 | 14 | 37.5 | 39 | Die | Stock |
Low Noise Amplifiers
Low Noise Amplifiers
Low Noise Amplifiers
| Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Availability |
|---|---|---|---|---|---|---|
| ALP302_0 | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 33 | 0.8 | Stock | |
| ALP302_A | InP HEMT Low Noise Amplifier | 17.2 - 21.2 | 32.5 | 0.8 | Stock | |
| ALP291 | InP HEMT Low Noise Amplifier | 71 - 86 | 29 | 2.7 | 3 | Stock |
| ALP275 | InP HEMT Low Noise Amplifier | 71 - 96 | > 26 | 3 | 4 | Stock |
| ALP280 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2 | 3 | Stock |
| ALP283 | InP HEMT Low Noise Amplifier | 80 - 100 | 29 | 2.5 | 3 | Stock |
| ALH495 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 18 | 4.3 | 3 | Stock |
| ALH495 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 18 | 4.8 | 3 | Stock |
| ALH497 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 17 | 4.2 | 0 | Stock |
| ALH497 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 17 | 4.9 | 0 | Stock |
| ALH503 (-LN) | HEMT Low Noise Amplifier | 80 - 100 | 16 | 4.2 | 0 | Stock |
| ALH503 (-GB) | HEMT Gain Block Amplifier | 80 - 100 | 16 | 4.9 | 0 | Stock |
| ALH504 (-LN) | HEMT Low Noise Amplifier | 82 - 102 | 18 | 4.1 | 3 | Stock |
| ALH504 (-GB) | HEMT Gain Block Amplifier | 82 - 102 | 18 | 4.8 | 3 | Stock |
| ALP292 | InP HEMT Low Noise Amplifier | 90 - 112 | 30 | 3 | 3 | Stock |
| ALH394 | HEMT Low Noise Amplifier | 92 - 96 | 17 | 5 | 5 | Stock |
Frequency Conversion
Frequency Conversion
Mixers
| Part | Description | RF Freq (GHz) | LO Freq (GHz) | IF Freq (GHz) | CL (dB) | Availability |
|---|---|---|---|---|---|---|
| MDJ183 | InP Schottky Diode Mixer | 17 - 32 | 17 - 32 | DC-10 | 8 | Pre-Production |
| MDJ169 | InP Schottky Diode Mixer | 24 - 44 | 24 - 44 | DC-15 | 7.5 | Pre-Production |
| MDJ178 | InP Schottky Diode Mixer | 37 - 61 | 37 - 61 | DC-15 | 8.5 | Pre-Production |
| MDJ187 | InP Schottky Diode Mixer | 40 - 76 | 40 - 76 | DC-25 | 9 | Pre-Production |
| MBH100 | HEMT Schottky Diode Mixer | 91 - 99 | 91 - 99 | DC-3 | 12 | Stock |
| MDJ191 | InP Schottky Diode Mixer | 92 - 97 | 92 - 97 | DC-20 | 8.5 | Pre-Production |
Switches
Switches
| Part | Description | Freq Out (GHz) | Freq In (GHz) | RF Input (dBm) | CG/CL/IL(dB) | Availability |
|---|---|---|---|---|---|---|
| SF0083 | SLCFET SPDT Switch | 0.5 – 25 | NA | NA | 0.38 / IL | Stock |
| SDH148 | HEMT SPDT Switch | 80 - 100 | NA | NA | 3 / IL | Stock |
Modules
Modules
| Part | Description | Frequency (GHz) | Gain (dB) | NF (dB) | P1dB (dBm) | Psat (dBm) | Form | Availability |
|---|---|---|---|---|---|---|---|---|
| MLA1101 | 140 GHz Low Noise Amplifier | 130-140 | 20 | 6 | TBD | TBD | Waveguide Module | Stock |
| MGA2101 | 225-325 GHz Gain Block Module | 225-325 | 16 | 8 | TBD | 0 | Waveguide Module | Stock |
RAD Hard Mixed Signal
RAD Hard Mixed Signal
| Datasheet | Description |
|---|---|
| Download | RADIATION HARDENED 128K X 8 CMOS EEPROM |
| Download | RADIATION HARDENED 32K X 8 CMOS EEPROM |
| Download | RADIATION HARDENED 8K X 8 CMOS EEPROM |
| Download | RADIATION HARDENED 16:1 ANALOG MULTIPLEXER NGCL3571 |
| Download | RADIATION HARDENED 16:1 ANALOG MULTIPLEXER NGCL3590 |
| Download | RADIATION HARDENED 16:1 ANALOG MULTIPLEXER NGCP3580 |
Discrete Devices
Discrete Devices
| Datasheet | Description |
|---|---|
| Download | BIPOLAR RF TRANSISTORS CLASS C 2.7-2.9 GHz |
| Download | BIPOLAR RF TRANSISTORS CLASS C 960-1215 MHz |
| Download | BIPOLAR RF TRANSISTORS CLASS C 1030/1090 MHz |
| Download | BIPOLAR RF TRANSISTORS CLASS C 1215-1400 MHz |
Foundry Service
GaN HEMT
GaN HEMT
| Technology | fT (GHz) | fmax (GHz) | Gm (mS/mm) | VDS,max (V) | Imax (A/mm) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|
| 200 nm GaN HEMT | 60 | 150 | 325 | 24*/28** | 1.26 | 100 | Yes | Yes | 100 | Space Qualified |
| 150 nm GaN HEMT | 75 | 175 | 410 | 24 | 1.09 | 75 | Yes | Yes | 100 | Commercially Qualified |
| 90 nm GaN PWR HEMT | 100 | 200 | 650 | 20 | 1.55 | 50 | Yes | Yes | 100 | Commercially Qualified |
| 90 nm GaN HSLN HEMT | 100 | 200 | 730 | 10 | 1.5 | 50 | Yes | Yes | 100 | Commercial Qualification Expected Q1 2027 |
*Space, **Commercial
InP HEMT
InP HEMT
| Technology | fT (GHz) | fmax (GHz) | Gm (mS/mm) | VDS,max (V) | Imax (A/mm) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|
| 100 nm InP HEMT | 200 | 400 | 1200 | 1.2 | 0.9 | 75 | Yes | Yes | 100 | Space Qualified |
| 70 nm InP IACC | 250 | TBD | 2400 | 1.3 | 1.0 | 75 | Yes | Yes | 100 | Engineering |
| 35 nm InP IACC | 400 | 1100 | 2500 | 1.2 | 1.0 | 50 | Yes | Yes | 75 | Engineering |
| 25 nm InP IACC | 610 | 1500 | 3000 | 1.2 | 1.2 | 25 | Yes | Yes | 75 | Engineering |
GaAs HEMT
GaAs HEMT
| Technology | fT (GHz) | fmax (GHz) | Gm (mS/mm) | VDS,max (V) | Imax (A/mm) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|
| 150 nm GaAs HEMT | 90 | 200 | 565 | 5 | 0.68 | 50/100 | Yes | Yes | 100 | Space Qualified |
| 100 nm GaAs HEMT-Low Noise | 120 | 250 | 675 | 4 | 0.67 | 100 | Yes | Yes | 100 | Space Qualified |
| 100 nm GaAs HEMT-Power | 125 | 250 | 690 | 4 | 0.67 | 50/100 | Yes | Yes | 100 | Space Qualified |
InP HBT
InP HBT
| Technology | fT (GHz) | fmax (GHz) | Beta | VCE,max (V) | Jc,max (mA/um²) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|
| 0.65 um InP TF4 Digital (R445) | 150 | 400 | 70 | 6 | 1.5 | 75 | No | Yes | 100 | Engineering |
| 0.65 um InP TF4 Mixed-Signal (R442) | 250 | 300 | 70 | 3.5 | 2.5 | 75 | No | Yes | 100 | Space Qualified |
| 0.8 um InP TF2P Power (R447) | 75 | 150 | 70 | 7.5 | 0.75 | 75 | Yes | Yes | 100 | Engineering |
| 0.8 um InP TF2 Digital (R443) | 150 | 200 | 70 | 5 | 1.5 | 75 | Yes | Yes | 100 | Space Qualified |
| 0.25 um InP TF5 (R371P5) | 350 | 700 | 30 | 3 | 5 | 75 | No | Yes | 100 | Engineering |
SLCFET
SLCFET
| Technology | Fco (THz) | Operation Frequency (GHz) | Ron (Ohm-mm) | Coff (pF/mm) | Ion (A/mm) | Control Voltage (V) | CW Input Power (dBm) | Vpo (V) | Breakdown Voltage (V) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) | Qualification |
| SLCFET 3S | 1.8 | DC to 100 | 0.35 | 0.25 | 1.4 | 0, -14 | ≤ 35 | -5 | 40 | 100 | Yes | Yes | 100 | Engineering |
| SLCFET 3HP | 1.8 | DC to 100 | 0.35 | 0.25 | 1.4 | 0, -20 | > 35 | -6 | 60 | 100 | Yes | Yes | 100 | Engineering |
Wafer Post Processing
Wafer Bumping and Dicing
Wafer Bumping and Dicing
- Bumping Process includes passivation, under bump metal, electroplating, solder sphere drop process.
- Whole Wafer probing 150mm to 300mm wafer sizes
- Dicing process includes: A dice before grind mechanical saw, thinning, laser die marking, die sort into waffle packs and tape & reel
- Metrology processing including whole wafer bump shear, 100% 2D/3D bump measurements as well as process controls in place for passivation and UBM layers
- Wafer sizes capability: 100mm, 150mm, 200mm and 300mm
Wafer Probe
Wafer Probe
| Datasheet | Description |
|---|---|
| Download | Northrop Grumman’s Microelectronics Test Services |
Advanced Packaging
Advanced Assembly Capabilities
Advanced Assembly Capabilities
- Multi-die, multi-foundry flip-chip 2D/3D assembly
- High accuracy thermocompression bonding
- Automated optical and x-ray inspections
- Organic, glass, silicon, and silicon carbide substrate handling
- Automated reflow, underfill, cleaning, ball attach
- High accuracy depaneling (mechanical, laser, saw)
- Spaceflight qualified packaging
- Hermetic wafer-level packaging
Advanced Test Capabilities
Advanced Test Capabilities
Test Capabilities Span Digital, Mixed Signal, Analog, and Cross-Domain
- Automated testing at multiple levels: whole wafer, singulated die on film frame, and package-level
- Multi-channel testing up to W-band
- Automated optical inspection (all formats)
- Classified testing options
- Post-test analysis & screening
Test Development Services
- Hardware & software design
- Test card, board, socket, etc. design
Reliability & Environmental Testing
- Burn-in / HAST / HTHB & other reliability tests
- RF shielded testing
Product Engineering & Management
- IP protection controls
- Yield management
Starry Nite Multi-project Wafer (MPW) Runs
Northrop Grumman was awarded the State-of-the-Art Radio Frequency Gallium Nitride (Starry Nite) program in Dec. 2021. As a part of the Starry Nite program, Northrop Grumman will mature a 90 nm Gallium Nitride node capable of W-band operation to manufacturing readiness level (MRL) 8. Throughout the program, foundry access to the 90 nm GaN node will be provided to external and internal designers through multi-project wafer (MPW) runs.
The 90 nm GaN technology is not a frozen process. Three model updates are planned during the program. Preliminary technology performance parameters are provided in the table.
Items of note:
- The Starry Nite program only pays for mask and fabrication
- Testing and subdicing available at additional cost
- ADS PDK supplied after NDA. Contact us for details on models for other design tools.
- Government purpose rights to the design may be required to participate
- All designs will be archived into a government repository
Starry Nite MPW Runs Calendar
Starry Nite MPW Runs Calendar
STARRY NITE MPWs |
2025 |
||||||||||||||
| Q1 | Q2 | Q3 | Q4 | ||||||||||||
| Foundry | Process | Offering | Name | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
NG |
GaN09 | 90nm | MPW1 | ||||||||||||
| MPW2 | |||||||||||||||
| MPW3 | |||||||||||||||
| MPW4 | |||||||||||||||
| MPW5 | |||||||||||||||
| MPW7 | 11 | ||||||||||||||
| MPW9 | 18 | ||||||||||||||
| GaN09 +AIC | MPW6 | 31 | |||||||||||||
| MPW8 | 2 | ||||||||||||||
| GaN09-LN | MPW1-LN | 24 | |||||||||||||
| MPW2-LN | 11 | ||||||||||||||
| MPW1-M | 6 | 3 | 9 | ||||||||||||
| MPW2-M | 27 | 25 | 3 | ||||||||||||
| GaN09-LN +AIC | MPW3-M | 22 | 19 | 12 | |||||||||||
| MPW4-M | 31 | 21 | |||||||||||||
STARRY NITE MPWs |
2026 |
2027 |
|||||||||||||||||||||||||
| Q1 | Q2 | Q3 | Q4 | Q1 | Q2 | Q3 | Q4 | ||||||||||||||||||||
| Foundry | Process | Offering | Name | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
NG |
GaN09 | 90nm | MPW1 | ||||||||||||||||||||||||
| MPW2 | |||||||||||||||||||||||||||
| MPW3 | |||||||||||||||||||||||||||
| MPW4 | |||||||||||||||||||||||||||
| MPW5 | |||||||||||||||||||||||||||
| MPW7 | |||||||||||||||||||||||||||
| MPW9 | |||||||||||||||||||||||||||
| GaN09 +AIC | MPW6 | ||||||||||||||||||||||||||
| MPW8 | 25 | ||||||||||||||||||||||||||
| GaN09-LN | MPW1-LN | ||||||||||||||||||||||||||
| MPW2-LN | |||||||||||||||||||||||||||
| MPW1-M | 23 | ||||||||||||||||||||||||||
| MPW2-M | 26 | ||||||||||||||||||||||||||
| GaN09-LN +AIC | MPW3-M | 9 | |||||||||||||||||||||||||
| MPW4-M | 20 | 15 | |||||||||||||||||||||||||
The steps for the MPW runs are:
- Application deadline – Complete application form and submit by application deadline
- Performer space awarded – Government will use completed applications to decide on which designs to run on the mask and notify designers
- Design submission – Approved designs must be submitted by the submission date on the calendar
- Die delivered – At completion of fabrication, die will be delivered to designers
Email us if interested in participating in a Starry Nite MPW Run: as-mps.sales@ngc.com
Preliminary Technology Performance Parameters
Preliminary Technology Performance Parameters
| Technology | fT (GHz) | fmax (GHz) | Gm (mS/mm) | VDS,max (V) | Imax (A/mm) | Wafer Thickness (µm) | Airbridged Metal Available | Backside Vias | Wafer Size (mm) |
|---|---|---|---|---|---|---|---|---|---|
| 90 nm GaN PWR HEMT | 100 | 200 | 650 | 20 | 1.55 | 50 | Yes | Yes | 100 |
| 90 nm GaN HSLN HEMT | 100 | 200 | 730 | 10 | 1.5 | 50 | Yes | Yes | 100 |
Application Notes and Technical Papers
Application Notes
Application Notes
| Revision | Title |
|---|---|
| Jun. 2008 | 94 GHz Chipset |
| Apr. 2008 | 94 GHz Selector Guide |
| Apr. 2008 | GaAs IC Die Handling, Assembly and Testing Techniques |
| Apr. 2008 | Effects of Hydrogen on Hermetically Packaged GaAs MMICs |
| May 2012 | GaN Chip Handling, Assembly and Testing Techniques |
| Jun. 2024 | Die on Tab Datasheet |
Presentations
Presentations
| Date | Title |
|---|---|
| 2003 | Highly Linear and Compact MMW Phased Array Transmitters |
Technical Papers
Technical Papers
| Date | Forum | Title |
|---|---|---|
| 2002 | GaAs MANTECH | GaAs Components for 60 GHz Wireless Communications Applications |
| 2001 | GaAs MANTECH | High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers |
| 1999 | IEEE RFIC Symposium | High Reliability Non-Hermetic 0.15 um GaAs Pseudomorphic HEMT MMIC Amplifiers |
Contact Us
Microelectronic Products and Services
Northrop Grumman Space Systems
One Space Park, D1/1024
Redondo Beach, CA 90278
USA
Sales Inquiries and Product Support: as-mps.sales@ngc.com